au.\*:("SCHETZINA, J. F")
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Current-voltage characteristics of electric contacts on p-type ZnSeYANG, Z; SCHETZINA, J. F.Journal of electronic materials. 1994, Vol 23, Num 10, pp 1071-1074, issn 0361-5235Article
Blue-green light-emitting diodes promise full-color displaysCOOK, J. W; SCHETZINA, J. F.Laser focus world. 1995, Vol 31, Num 3, pp 101-104, issn 1043-8092Article
Growth of high mobility n-type CdTe by photoassisted molecular beam epitaxyBICKNELL, R. N; GILES, N. C; SCHETZINA, J. F et al.Applied physics letters. 1986, Vol 49, Num 17, pp 1095-1097, issn 0003-6951Article
Growth and properties of In-doped CdMnTe-CdTe superlatticesBICKNELL, R. N; GILES, N. C; SCHETZINA, J. F et al.Applied physics letters. 1987, Vol 50, Num 11, pp 691-693, issn 0003-6951Article
p-Type CdTe epilayers grown by photoassisted molecular beam epitaxyBICKNELL, R. N; GILES, N. C; SCHETZINA, J. F et al.Applied physics letters. 1986, Vol 49, Num 25, pp 1735-1737, issn 0003-6951Article
p-type CdTe epilayers grown by photoassisted molecular beam epitaxyBICKNELL, R. N; GILES, N. C; SCHETZINA, J. F et al.Applied physics letters. 1986, Vol 49, Num 25, pp 1735-1737, issn 0003-6951Article
High quality epitaxial films of CdTe on sapphireCOLE, H. S; WOODBURY, H. H; SCHETZINA, J. F et al.Journal of applied physics. 1984, Vol 55, Num 8, pp 3166-3168, issn 0021-8979Article
Reflectance of AlAs-GaAs and In0.28 Ga0.72 As-GaAs superlatticesLAIDIG, W. D; BLANKS, D. K; SCHETZINA, J. F et al.Journal of applied physics. 1984, Vol 56, Num 6, pp 1791-1796, issn 0021-8979Article
Blue-green laser diodes on ZnSe substratesYU, Z; BONEY, C; HUGHES, W. C et al.Electronics Letters. 1995, Vol 31, Num 16, pp 1341-1342, issn 0013-5194Article
Blue and green light-emitting diode structures grown by molecular beam epitaxy on ZnSe substratesEASON, D; REN, J; YU, Z et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 718-724, issn 0022-0248, 2Conference Paper
Photoluminescence of HgTe/CdTe superlattices under high hydrostatic pressuresCHEONG, H. M; BURNETT, J. H; PAUL, W et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 7, pp 4460-4463, issn 0163-1829Article
Arsenic-doped CdTe epilayers grown by photoassisted molecular beam epitaxyHARPER, R. L. JR; HWANG, S; GILES, N. C et al.Applied physics letters. 1989, Vol 54, Num 2, pp 170-172, issn 0003-6951Article
Negative energy gap in HgTe-CdTe heterostructures with thick wellsHOFFMAN, C. A; MEYER, J. R; BARTOLI, F. J et al.Physical review. B, Condensed matter. 1989, Vol 40, Num 6, pp 3867-3871, issn 0163-1829, 5 p.Article
The effects of a high-temperature anneal on the electrical and optical properties of bulk CdTe:InGILES, N. C; HWANG, S; SCHETZINA, J. F et al.Journal of applied physics. 1988, Vol 64, Num 5, pp 2656-2665, issn 0021-8979Article
Light hole interband transitions in HgTe-HgCdTe superlatticesSCHULMAN, J. N; WU, O. K; PATTEN, E. A et al.Applied physics letters. 1988, Vol 53, Num 24, pp 2420-2422, issn 0003-6951Article
An electroreflectance study of CdTeENLOE, W. S; PARKER, J. C; VESPOLI, J et al.Journal of applied physics. 1987, Vol 61, Num 5, pp 2005-2010, issn 0021-8979Article
Cd1-xMnx Te-CdTe multilayers grown by molecular beam epitaxyBICKNE, R. N; YANKA, R. W; GILES-TAYLOR, N. C et al.Applied physics letters. 1984, Vol 45, Num 1, pp 92-94, issn 0003-6951Article
MBE growth and properties of ZnO on sapphire and SiC substratesJOHNSON, M. A. L; FUJITA, S; ROWLAND, W. H et al.Journal of electronic materials. 1996, Vol 25, Num 5, pp 855-862, issn 0361-5235Article
MBE growth and properties of GaN and AlxGa1-xN on GaN/SiC substratesJOHNSON, M. A. L; FUJITA, S; ROWLAND, W. H et al.Journal of electronic materials. 1996, Vol 25, Num 5, pp 793-797, issn 0361-5235Article
Growth of HgSe and Hg1-xCdxSe thin films by molecular beam epitaxyLANSARI, Y; COOK, J. W; SCHETZINA, J. F et al.Journal of electronic materials. 1993, Vol 22, Num 8, pp 809-813, issn 0361-5235Conference Paper
High-resolution study of stimulated emission from blue-green laser diodesYU, Z; REN, J; OTSUKA, N et al.Applied physics letters. 1992, Vol 61, Num 11, pp 1266-1268, issn 0003-6951Article
Improved ohmic contacts for p-type ZnSe and related p-on-n diode stucturesLANSARI, Y; REN, J; SNEED, B et al.Applied physics letters. 1992, Vol 61, Num 21, pp 2554-2556, issn 0003-6951Article
Transport investigation of HgTe-CdTe single and multiple quantum wellsHOFFMAN, C. A; MEYER, J. R; BARTOLI, F. J et al.Surface science. 1990, Vol 228, Num 1-3, pp 45-48, issn 0039-6028Conference Paper
Diluted magnetic semiconductor (Cd1-xMnxTe) Schottky diodes and field-effect transistorsDREIFUS, D. L; KOLBAS, R. M; HARPER, R. L et al.Applied physics letters. 1988, Vol 53, Num 14, pp 1279-1281, issn 0003-6951Article
CdTe metal-semiconductor field-effect transistorsDREIFUS, D. L; KOLBAS, R. M; HARRIS, K. A et al.Applied physics letters. 1987, Vol 51, Num 12, pp 931-933, issn 0003-6951Article